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september 2015 docid028347 rev 2 1 / 12 this is information on a product in full production. www.st.com STW58N65DM2AG automotive - grade n - channel 650 v, 0.058 typ., 48 a mdmesh? dm2 power mosfet in a to - 247 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STW58N65DM2AG 650 v 0.065 48 a 360 w ? designed for automotive applications and aec - q101 qualified ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - protected applications ? switching applications description this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency con verters and ideal for bridge topologies and zvs phase - shift converters. table 1: device summary order code marking package packing STW58N65DM2AG 58n65dm2 to - 247 tube t o-247 1 2 3
contents STW58N65DM2AG 2 / 12 docid028347 rev 2 contents 1 ele ctrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circui ts ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 to - 247 package information ................................ ............................. 9 5 revision history ................................ ................................ ............ 11
STW58N65DM2AG electrical ratings docid028347 rev 2 3 / 12 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t case = 25 c 48 a drain current (continuous) at t case = 100 c 30 i dm (1) drain current (pulsed) 192 a p tot total dissipation at t case = 25 c 360 w dv/dt (2) peak diode recovery voltage slope 50 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) pulse width is limited by safe operating area. (2) i sd 48 a, di/dt=800 a/s; v ds peak < v (br)dss , v dd = 80% v (br)dss . (3) v ds 520 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 0.35 c/w r thj - amb thermal resistance junction - ambient 50 table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive 7 a e as (1) single pulse avalanche energy 1300 mj notes: (1) starting t j = 25 c, i d = i ar , v dd = 50 v.
electrical characteristics STW58N65DM2AG 4 / 12 docid028347 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0 v, v ds = 650 v 10 a v gs = 0 v, v ds = 650 v, t case = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 5 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 24 a 0.058 0.065 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 4100 - pf c oss output capacitance - 160 - c rss reverse transfer capacitance - 2.5 - c oss eq. (1) equivalent output capacitance v ds = 0 to 520 v, v gs = 0 v - 375 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 4.1 - q g total gate charge v dd = 520 v, i d = 48 a, v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 88 - nc q gs gate - source charge - 22 - q gd gate - drain charge - 37 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 325 v, i d = 24 a r g = 4.7 , v gs = 10 v (see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" ) - 28 - ns t r rise time - 31 - t d(off) turn - off delay time - 157 - t f fall time - 7.7 -
STW58N65DM2AG electrical characteristics docid028347 rev 2 5 / 12 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 48 a i sdm (1) source - drain current (pulsed) - 192 a v sd (2) forward on voltage v gs = 0 v, i sd = 48 a - 1.6 v t rr reverse recovery time i sd = 48 a, di/dt = 100 a/s, v dd = 100 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 135 ns q rr reverse recovery charge - 0.68 c i rrm reverse recovery current - 10 a t rr reverse recovery time i sd = 48 a, di/dt = 100 a/s, v dd = 100 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 260 ns q rr reverse recovery charge - 2.75 c i rrm reverse recovery current - 21 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STW58N65DM2AG 6 / 12 docid028347 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STW58N65DM2AG electrical characteristics docid028347 rev 2 7 / 12 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normal ized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
test circuits STW58N65DM2AG 8 / 12 docid028347 rev 2 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
STW58N65DM2AG package information docid028347 rev 2 9 / 12 4 package information in order to meet environmental requirements, st offers these dev ices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 247 package information figure 20 : to - 247 package outline
package information STW58N65DM2AG 10 / 12 docid028347 rev 2 table 9: to - 247 package mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
STW58N65DM2AG revision history docid028347 rev 2 11 / 12 5 revision history table 10: document revision history date revision changes 09 - sep - 2015 1 initial release. 15 - sep - 2015 2 in section electrical characteristics (curves) : - updated figure safe operating area
STW58N65DM2AG 12 / 12 docid028347 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from t he information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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